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CM1400DU-24NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Mega Power DualTM IGBTMOD
1400 Amperes/1200 Volts
TC MEASURED POINTS (THE SIDE OF CU BASEPLATE) P (8 PLACES) U H A D G H
L K
C2E1 C S G E T J E2 C1 U V H G H H H H G H R (9 PLACES) M L F E G CB E C J F
LABEL
Description: Powerex IGBTMODTM Modules are designed for use in switching two IGBT applications. Each module consists of a half-bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: High Power UPS Large Motor Drives Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1400DU-24NF is a 1200V (VCES), 1400 Ampere Dual IGBTMOD Power Module.
Type CM Current Rating Amperes 1400 VCES Volts (x 50) 24
C2 C2E1 E2 C1
G2 E2
E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 5.91 5.10 1.670.01 5.410.01 6.54 2.910.01 1.65 0.55 Millimeters 150.0 129.5 42.50.25 137.50.25 166.0 74.00.25 42.0 14.0 Dimensions J K L M P R U V Inches 1.500.01 0.16 Millimeters 38.00.25 4.0
1.36 +0.04/-0.02 34.6 +1.0/-0.5 0.0750.08 0.26 M6 Metric 0.62 0.71 1.90.2 6.5 M6 15.7 18.0
Housing Type (J.S.T MFG. CO. L . TD) S = VHR-2N T = VHR-5N
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1400DU-24NF Mega Power DualTM IGBTMOD 1400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current (Tj 150C) Emitter Current (TC = 25C)** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150C) (TC' = 25C) Mounting Torque, M6 Mounting Screws Mounting Torque, M6 Main Terminal Screw Weight (Typical) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM PC - - - Viso CM1400DU-24NF -40 to 150 -40 to 125 1200 20 1400 2800* 1400 2800* 8920 40 40 1400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 CC unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage (Without Lead Resistance) Module Lead Resistance Total Gate Charge Emitter-Collector Voltage** Symbol ICES IGES VGE(th) VCE(sat) (Chip) R(lead) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 140mA, VCE = 10V IC = 1400A, VGE = 15V, Tj = 25C IC = 1400A, VGE = 15V, Tj = 125C IC = 1400A, Terminal-chip VCC = 600V, IC = 1400A, VGE = 15V IE = 1400A, VGE = 0V Min. - - 6 - - - - - Typ. - - 7 1.9 2.1 0.143 7200 - Max. 1 0.5 8 2.5 - - - 3.4 Units mA A Volts Volts Volts m nC Volts
Dynamic Electrical Characteristics, Tj = 25 CC unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 1400A, IE = 1400A, VGE1 = VGE2 = 15V, RG = 1.0 , Inductive Load Switching Operation VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 100 Max. 220 25 4.7 400 300 1000 300 800 - Units nF nF nF ns ns ns ns ns C
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1400DU-24NF Mega Power DualTM IGBTMOD 1400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c')Q Rth(j-c')D Rth(c-f) Test Conditions Per IGBT 1/2 Module, TC Reference Point Under Chip Thermal Resistance, Junction to Case Per FWDi 1/2 Module, TC Reference TC Reference Point Under Chip Contact Thermal Resistance Per 1/2 Module, Thermal Grease Applied - 0.016 - C/W - - 0.023 C/W Min. - Typ. - Max. 0.014 Units C/W
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
2800
COLLECTOR CURRENT, IC, (AMPERES)
2400
13
COLLECTOR CURRENT, IC, (AMPERES)
15
2400 2000 1600 1200 800 400 0
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
Tj = 25oC
12
2800
VCE = 10V Tj = 25C Tj = 125C
5 4
VGE = 15V Tj = 25C Tj = 125C
2000 1600
11
3 2
1200 800 400
8 9
10
1
0 0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 4 8 12 16 20 0 400 600 1200 1600 2000 2400 2800
COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
104
Tj = 25C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
103
VGE = 0V Cies
8 6 4 2
IC = 1400A IC = 560A IC = 2800A
102
103
Coes
101
Cres
Tj = 25C Tj = 125C
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
102 0.5 1.0
1.5
2.0
2.5 3.0
3.5
4.0
100 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1400DU-24NF Mega Power DualTM IGBTMOD 1400 Amperes/1200 Volts
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
104
REVERSE RECOVERY TIME, trr, (ns)
103
Irr
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 1400A
16 12 8 4
SWITCHING TIME, (ns)
VCC = 400V VCC = 600V
103
tf tr
td(off) td(on) VCC = 600V VGE = 15V RG = 1.0 Tj = 125C Inductive Load
trr
102
VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive Load
102
102
101 102
103
COLLECTOR CURRENT, IC, (AMPERES)
104
101 102
103
EMITTER CURRENT, IE, (AMPERES)
101 104
0 0
2000
4000
6000
8000 10000
GATE CHARGE, QG, (nC)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) Per Unit Base Rth(j-c) = 0.014C/W (IGBT) Rth(j-c) = 0.023C/W (FWDi) Single Pulse TC = 25C
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
101
10-3
10-2
10-1
100
101
103
SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL)
103
SWITCHING LOSS, Err, (mJ/PULSE)
SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) VCC = 600V VGE = 15V Tj = 125C RG = 1.0 Inductive Load
100
102
10-1
10-1
102
101
10-2
10-2
VCC = 600V VGE = 15V Tj = 125C RG = 1.0 ESW(on) ESW(off) Inductive Load
10-3 10-5
TIME, (s)
10-4
10-3 10-3
100 102
103
COLLECTOR CURRENT, IC, (AMPERES)
104
101 102
103
EMITTER CURRENT, IE, (AMPERES)
104
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